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S70M - Silicon Standard Recovery Diode

This page provides the datasheet information for the S70M, a member of the S70K Silicon Standard Recovery Diode family.

Datasheet Summary

Features

  • High Surge Capability.
  • Types from 800 V to 1200 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S70K thru S70QR VRRM = 800 V - 1200 V IF = 70 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S70K (R) S70M (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forwa.

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Datasheet Details

Part number S70M
Manufacturer GeneSiC
File Size 625.31 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet S70M Datasheet
Additional preview pages of the S70M datasheet.

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Other Datasheets by GeneSiC
  • S70MR - Silicon Standard Recovery Diode
  • S70K - Silicon Standard Recovery Diode
  • S70KR - Silicon Standard Recovery Diode
  • S70Q - Silicon Standard Recovery Diode
  • S70QR - Silicon Standard Recovery Diode

Full PDF Text Transcription

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S70K thru S70QR VRRM = 800 V - 1200 V IF = 70 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S70K (R) S70M (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 140 °C TC = 25 °C, tp = 8.
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