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S320Q - Silicon Standard Recovery Diode

This page provides the datasheet information for the S320Q, a member of the S320J Silicon Standard Recovery Diode family.

Datasheet Summary

Features

  • High Surge Capability.
  • Types from 600 V to 1200 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S320J thru S320QR VRRM = 600 V - 1200 V IF = 320 A AC CA Stud Stud (R) DO-9 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S320J (R) S320K (R) S320M (R) S320Q (R) Repetitive peak reverse voltage RMS revers.

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Datasheet preview – S320Q

Datasheet Details

Part number S320Q
Manufacturer GeneSiC
File Size 730.57 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet S320Q Datasheet
Additional preview pages of the S320Q datasheet.

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Other Datasheets by GeneSiC
  • S320QR - Silicon Standard Recovery Diode
  • S320J - Silicon Standard Recovery Diode
  • S320JR - Silicon Standard Recovery Diode
  • S320K - Silicon Standard Recovery Diode
  • S320KR - Silicon Standard Recovery Diode
  • S320M - Silicon Standard Recovery Diode
  • S320MR - Silicon Standard Recovery Diode

Full PDF Text Transcription

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. S320J thru S320QR VRRM = 600 V - 1200 V IF = 320 A AC CA Stud Stud (R) DO-9 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions S320J (R) S320K (R) S320M (R) S320Q (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.
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