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GB50MPS17-247 Datasheet Silicon Carbide Schottky Diode

Manufacturer: GeneSiC

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Datasheet Details

Part number GB50MPS17-247
Manufacturer GeneSiC
File Size 320.12 KB
Description Silicon Carbide Schottky Diode
Download GB50MPS17-247 Download (PDF)

Overview

GB50MPS17-247 1700V 50A SiC Schottky MPS™ Diode Silicon Carbide Schottky.

Key Features

  • High Avalanche (UIS) Capability.
  • Enhanced Surge Current Capability.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • 175 °C Maximum Operating Temperature.
  • Temperature Independent Switching Behavior.
  • Positive Temperature Coefficient of VF.
  • Extremely Fast Switching Speeds Package Case VRRM IF (Tc = 135°C) QC Case K A K TO-247-2 A = 1700 V = 81 A = 184 nC Advantages.
  • Low Standby Power Losses.
  • Im.

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