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GA50JT12-CAL Datasheet Junction Transistor

Manufacturer: GeneSiC

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GA50JT12-CAL junction transistor by GeneSiC - Datasheet Preview

Datasheet Details

Part number	GA50JT12-CAL
Manufacturer	GeneSiC
File Size	1.99 MB
Description	Junction Transistor
Datasheet	GA50JT12-CAL Datasheet

Overview

Die Datasheet GA50JT12-CAL Normally – OFF Silicon Carbide Junction.

Key Features

210 °C Maximum Operating Temperature.
Gate Oxide Free SiC Switch.
Exceptional Safe Operating Area.
Excellent Gain Linearity.
Temperature Independent Switching Performance.
Low Output Capacitance.
Positive Temperature Coefficient of RDS,ON.
Suitable for Connecting an Anti-parallel Diode VDS = 1200 V RDS(ON) = 20 mΩ ID @ 25 oC = 100 A hFE = 85 Die Size = 4.35 mm x 4.35 mm Advantages.
Compatible with Si MOSFET/IGBT Gate Drive ICs.
> 20 µs Sh.

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