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GA20SICP12-263 Datasheet Silicon Carbide Junction Transistor/Schottky Diode

Manufacturer: GeneSiC

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Datasheet Details

Part number GA20SICP12-263
Manufacturer GeneSiC
File Size 291.63 KB
Description Silicon Carbide Junction Transistor/Schottky Diode
Datasheet download datasheet GA20SICP12-263 Datasheet

Overview

  Silicon Carbide Junction Transistor/Schottky Diode Co-pack.

Key Features

  • 175 °C maximum operating temperature.
  • Temperature independent switching performance.
  • Gate oxide free SiC switch.
  • Integrated SiC Schottky Rectifier.
  • Positive temperature coefficient for easy paralleling.
  • Low intrinsic device capacitance.
  • Low gate charge Advantages.
  • Low switching losses.
  • High circuit efficiency.
  • High temperature operation.
  • High short circuit withstand capability.
  • Reduced cooling requirements.
  • Reduced system size Pa.

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