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G3R20MT12N Datasheet Silicon Carbide MOSFET

Manufacturer: GeneSiC

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Datasheet Details

Part number G3R20MT12N
Manufacturer GeneSiC
File Size 1.15 MB
Description Silicon Carbide MOSFET
Datasheet download datasheet G3R20MT12N Datasheet

Overview

G3R20MT12N 1200 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement.

Key Features

  • G3R™ Technology - +15 V / -5 V Gate Drive.
  • Superior QG x RDS(ON) Figure of Merit.
  • Low Capacitances and Low Gate Charge.
  • Normally-Off Stable Operation up to 175°C.
  • Fast and Reliable Body Diode.
  • High Avalanche and Short Circuit Ruggedness.
  • Low Conduction Losses at High Temperatures.
  • Optimized Package with Separate Driver Source Pin Advantages.
  • Increased Power Density for Compact System.
  • High Frequency Switch.

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