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A-GA10JT12 Datasheet Super Junction Transistor

Manufacturer: GeneSiC

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Datasheet Details

Part number A-GA10JT12
Manufacturer GeneSiC
File Size 775.58 KB
Description Super Junction Transistor
Datasheet download datasheet A-GA10JT12 Datasheet

Overview

Device under development A-GA10JT12 Normally – OFF Silicon Carbide Super Junction Transistor VDS I D RDS(ON) = 1200 V = 7A = 220.

Key Features

  • 225 oC maximum operating temperature.
  • Best in class temperature independent switching and blocking performance.
  • Lowest VDS(ON) as compared to any other SiC switch.
  • Suitable for connecting an anti-parallel diode.
  • Gate oxide free SiC switch.
  • Positive temperature coefficient for easy paralleling.
  • Low gate charge.
  • Low intrinsic capacitance Advantages.
  • Low switching losses.
  • Higher efficiency Package D G S Ap.

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