Datasheet4U Logo Datasheet4U.com

1N5826 - Silicon Power Schottky Diode

Key Features

  • High Surge Capability.
  • Types from 20 V to 40 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5826 thru 1N5828R VRRM = 20 V - 40 V IF = 15 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5826 (R) 1N5827 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous for.

📥 Download Datasheet

Datasheet Details

Part number 1N5826
Manufacturer GeneSiC
File Size 875.11 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet 1N5826 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
1N5826 15A SCHOTTKY RECTIFIERS Digitron Semiconductors
1N5826 (1N5826 - 1N5828R) Schottky Power Diode Naina Semiconductor
1N5826 Silicon Power Schottky Diode America Semiconductor
1N5826 Power Rectifier SOLID STATE
1N5826 SCHOTTKY DIODES TRANSYS

Other Datasheets by GeneSiC

Part Number Description
1N5826R Silicon Power Schottky Diode
1N5827 Silicon Power Schottky Diode
1N5827R Silicon Power Schottky Diode
1N5828 Silicon Power Schottky Diode
1N5828R Silicon Power Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5826 thru 1N5828R VRRM = 20 V - 40 V IF = 15 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5826 (R) 1N5827 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.