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5N20V - GE5N20V

General Description

The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • RDS(ON) < 36mΩ @ VGS=2.7V RDS(ON) < 27.5mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.
  • VDS = 20V,ID = 5A Marking and pin Assignment.

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Datasheet Details

Part number 5N20V
Manufacturer Gemos
File Size 301.50 KB
Description GE5N20V
Datasheet download datasheet 5N20V Datasheet

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Full PDF Text Transcription (Reference)

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GEMOS www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR GE5N20V N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES RDS(ON) < 36mΩ @ VGS=2.7V RDS(ON) < 27.5mΩ @ VGS=4.