• Part: TGBLN6601-5DL8
  • Description: Dual N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 523.88 KB
Download TGBLN6601-5DL8 Datasheet PDF
Galaxy Microelectronics
TGBLN6601-5DL8
Features - Super low gate charge - Green device available - Excellent Cd V / dt effect decline - Advanced high cell density trench technology - Halogen free - Qualified to AEC-Q101 standards for high reliability Mechanical Data - Case: PDFN5×6-8LC - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN5×6-8LC Ordering Information Part Number TGBLN6601-5DL8 Package PDFN5×6-8LC Shipping Quantity 5000 pcs / Tape & Reel Marking Code GBLN6601 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) - 1 Continuous Drain Current (TC = 100°C) - 1 Pulsed Drain Current ( tp=10us) Single Pulse Avalanche Energy - 3 Symbol VDSS VGSS IDM EAS Value 60 ±20 25 18 98 40 Unit V V A A A m J Thermal Characteristics Parameter Power Dissipation (TC = 25°C) - 4 Thermal Resistance Junction-to-Case - 1 Thermal Resistance...