Datasheet4U Logo Datasheet4U.com

TGBLN6601-5DL8 - Dual N-Channel Enhancement Mode MOSFET

Key Features

  • Super low gate charge.
  • Green device available.
  • Excellent CdV / dt effect decline.
  • Advanced high cell density trench technology.
  • Halogen free.
  • Qualified to AEC-Q101 standards for high reliability Mechanical Data.
  • Case: PDFN5×6-8LC.
  • Molding Compound: UL Flammability Classification Rating 94V-0.
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN5×6-8LC Ordering Information Part Number TGBLN6601-5DL8 Package PDFN5×6-8L.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TGB2001 Lange Coupler TriQuint Semiconductor
TGB2010 Bessel Filter TriQuint Semiconductor
TGB2010-SM Packaged Bessel Filter TriQuint Semiconductor
TGB4001 Lange Coupler TriQuint Semiconductor
TGB4002 Lange Coupler TriQuint Semiconductor

Other Datasheets by Galaxy Microelectronics

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Dual N-Channel Enhancement Mode MOSFET TGBLN6601-5DL8 Features  Super low gate charge  Green device available  Excellent CdV / dt effect decline  Advanced high cell density trench technology  Halogen free  Qualified to AEC-Q101 standards for high reliability Mechanical Data  Case: PDFN5×6-8LC  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN5×6-8LC Ordering Information Part Number TGBLN6601-5DL8 Package PDFN5×6-8LC Shipping Quantity 5000 pcs / Tape & Reel Marking Code GBLN6601 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) *1 Continuous Drain Current (TC = 100°C) *1 Pulsed Dr