• Part: TBL900P06D
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 359.12 KB
Download TBL900P06D Datasheet PDF
Galaxy Microelectronics
TBL900P06D
Features - Super low gate charge - Excellent Cd V/dt effect decline - Advanced high cell density Trench technology - Halogen free - Qualified to AEC-Q101 standards for high reliability Mechanical Data - Case: TO-252 - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Ordering Information Part Number TBL900P06D Package TO-252 Shipping Quantity 80 pcs / Tube or 2500 pcs / Tape & Reel Marking Code 900P06D Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Pulsed Drain Current Symbol VDSS VGSS ID IDM Value -60 ±20 -18 -64 Unit V V A A Thermal Characteristics Parameter Power Dissipation (TC = 25°C) Thermal Resistance Junction-to-Case - 1 Operating Junction Temperature Range Storage Temperature Range Symbol PD RθJC TJ TSTG Value 57 2.2 -55 ~ +150 -55 ~ +150 Unit W °C/W °C °C MTM0703A: September...