• Part: TBL170N10TD
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 540.67 KB
Download TBL170N10TD Datasheet PDF
Galaxy Microelectronics
TBL170N10TD
Features - Low RDS(ON) & FOM - Extremely low switching loss - Excellent stability and uniformity - Halogen free - Qualified to AEC-Q101 standards for high reliability Mechanical Data - Case: TO-252 - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Ordering Information Part Number TBL170N10TD Package TO-252 Shipping Quantity 80 pcs / Tube & 2500 pcs / Tape & Reel Marking Code 170N10TD Maximum Ratings (@ TC = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) - 5 Continuous Drain Current (TC = 100°C) - 5 Continuous Drain Current (TA = 25°C) Continuous Drain Current (TA = 100°C) Pulsed Drain Current - 3 Single Pulse Avalanche Energy - 3, 6 Symbol VDSS VGSS ID ID ID ID IDM EAS Value 100 ±20 50 32 8 5 180 11 Unit V V A A A A A m J Thermal Characteristics Parameter Power Dissipation (TC = 25°C) - 2 Thermal...