GSMBT2014
Description
Features
P NP EP ITAXI AL P L ANAR T RANS ISTO R
The GSMBT2014 is designed for general purpose switching and amplifier applications. Excellent h FE Linearity : h FE (0.1m A)/ h FE (2m A)=0.95 (Typ.) plementary to GSMBT4075
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IB PD Ratings +150 -55~+150 -50 -50 -5 -150 -30 225 Unit
V V V m A m A m W
Electrical Characteristics (Ta = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO
- VCE(sat)
- VBE(sat)
- h FE1
- h FE2 f T Cob Min. -50 -50 -5 70 25 80 Typ.
- )
Max. -100 -100 -300 -1.1 400 7 Unit V V V n A n A m V V Test Conditions...
