GSMBT1815
Description
Package Dimensions
NP N E PITAXI AL P L ANAR T RANS ISTO R
The GSMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification.
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 60 50 5 150 225 V V V m A m W Unit
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO IEBO
- VCE(sat)
- VBE(sat)
- h FE1
- h FE2 f T Cob at Ta = 25
Min. 60 50 5 120 25 80 Typ. Max. 100 100 250 1 700 3.5 MHz p F Unit V V V n A n A m V V IC=100u A IC=1m A IE=10u A VCB=60V VEB=5V IC=100m A, IB=10m A IC=100m A, IB=10m A VCE=6V, IC=2m A VCE=6V, IC=150m A VCE=10V, IC=1m A, f=100MHz...
