• Part: GSMBT1623
  • Description: TRANSISTOR
  • Category: Transistor
  • Manufacturer: GTM
  • Size: 173.53 KB
Download GSMBT1623 Datasheet PDF
GTM
GSMBT1623
Description Package Dimensions NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT1623 is designed for use driver stage of AF amplifier and general purpose application. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 60 50 5 150 250 V V V m A m W Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - VBE(sat)1 - h FE1 - h FE2 - h FE3 f T Cob at Ta = 25 Min. 60 50 5 90 25 80 80 Typ. Max. 100 100 250 1.0 600 3.5 MHz p F Unit V V V n A n A m V V IC=100u A IC=1m A IE=10u A VCB=60V VEB=5V IC=100m A, IB=10m A IC=100m A, IB=10m A VCE=6V, IC=1m A VCE=6V, IC=150m A VCE=1V, IC=10m A...