GSMBT1015
Description
P NP E PITAXI AL P L ANAR T RANS ISTO R
The GSMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -50 -50 -5 -150 225 V V V m A m W Unit
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO IEBO
- VCE(sat)
- VBE(sat)
- h FE1
- h FE2 f T Cob at Ta = 25
Min. -50 -50 -5 120 25 80 Typ. Max. -100 -100 -300 -1.1 700 7 MHz p F Unit V V V n A n A m V V IC=-100u A IC=-1m A IE=-10u A VCB=-50V VEB=-5V IC=-100m A, IB=-10m A IC=-100m A, IB=-10m A VCE=-6V, IC=-2m A VCE=-6V, IC=-150m A...
