GESD1060
Description
Features
NPN EPITAXIAL PLANAR T RANSISTOR
The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching. Low Collector-Emitter Saturation Voltage : VCE (sat) =0.4V (Max.) @ IC=3A, IB=0.3A,
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings (TA=25 )
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Total Device Dissipation (TC=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD TJ Tstg Ratings 60 50 6 5 9 30 150 -55 ~ +150 Unit V V V A A W
Electrical Characteristics (TA = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO
- VCE(sat)
- h FE1
- h FE2 f T Cob ton (Turn-on Time) tstg (Storage Time) tf (Fall...
