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GE2026 - NPN EPITAXIAL PLANAR TRANSISTOR

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Datasheet Details

Part number GE2026
Manufacturer GTM
File Size 382.21 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet GE2026 Datasheet

General Description

The GE2026 is designed for general purpose application.

Overview

ISSUED DATE :2005/09/05 REVISED DATE : GE2026 NPN EPITAXIAL PLANAR.

Key Features

  • Low Collector Saturation Voltage : VCE (sat) =1.0V (Max. ) @ IC=2A, IB=0.2A, Package Dimensions Absolute Maximum Ratings (TA=25к) Parameter Symbol Collector to Base Voltage VCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage VEBO Collector Current IC Base Current IB Total Device TA=25к PD Dissipation TC=25к PD Junction Temperature TJ Storage Temperature Tstg REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 1.

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