GD501SD
Description
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 5 V, C U R R E N T 0 . 1 A
Package Dimensions
The GD501SD is designed for low power rectification and high reliability.
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70
REF. L b c Q1
Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18
0.15 BSC.
Parameter Junction Temperature Storage Temperature Maximum Peak Repetitive Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Peak Forward Surge Current at 8.3m Sec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Average Forward Rectified Current Total Power Dissipation
Symbol Tj Tstg VRRM VRMS VDC IFSM CJ Io PD
Ratings +125 -40 ~ +125 45 32 40 1.0 6.0 0.1 225
Unit
V V V A p F A m W
Characteristics at Ta = 25
Symbol VF(1) VF(2) IR Max 0.55 0.34 30.0 Unit V V u A Test Condition IF = 100m A IF = 10 m A VR = 10V
Characteristics Maximum Instantaneous...
