G1333 Datasheet P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: GTM

G1333 p-channel enhancement mode power mosfet by GTM - Datasheet Preview

Datasheet Details

Part number	G1333
Manufacturer	GTM
File Size	377.92 KB
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Download	G1333 Download (PDF)

General Description

*Simple Gate Drive *Small Package Outline *Fast Switching Speed

Overview

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE : G1333 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 800m -550mA The G1333 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.

Key Features

Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD.

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