GM3019
Description
Package Dimensions
1/1 NPN EPITAXIAL PLANAR TRANSISTOR
The GM3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A.
REF. A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF. G H I J K L M
Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Unit
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 140 80 7 1 1 V V V A W
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hfe1 hfe2 hfe3 hfe4 hfe5 Cob f T at Ta = 25
Min. 140 80 7 50 90 100 50 15 100 12 p F MHz Typ. Max. 50 50 200 1.1 300 Unit V V V n A n A m V V IC=100u A , IE=0 IC=30m A. IB=0 IE=100u A, IC=0 VCB=90V VBE=5V IC=150m A, IB=15m A IC=150m A, IB=15m A VCE=10V,...
