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GS8160V32AT Datasheet 1M x 18 512K x 32 512K x 36 18Mb Sync Burst SRAMs

Manufacturer: GSI Technology

Download the GS8160V32AT datasheet PDF. This datasheet also includes the GS8160V18AT variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (GS8160V18AT_GSITechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GS8160V32AT
Manufacturer GSI Technology
File Size 528.89 KB
Description 1M x 18 512K x 32 512K x 36 18Mb Sync Burst SRAMs
Datasheet download datasheet GS8160V32AT Datasheet

General Description

Applications The GS8160V18/32/36AT is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Byte Write and Global Write Byte write operation is performed by using Byte Write enable (BW) input combined with o

Overview

Preliminary www.DataSheet4U.com GS8160V18/32/36AT-350/333/300/250/200/150 100-Pin TQFP Commercial Temp Industrial.

Key Features

  • 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 350 MHz.
  • 150 MHz 1.8 V VDD 1.8 V I/O.
  • FT pin for user-configurable flow through or pipeline operation.
  • Single Cycle Deselect (SCD) operation.
  • 1.8 V +10%/.
  • 10% core power supply.
  • 1.8 V I/O supply.
  • LBO pin for Linear or Interleaved Burst mode.
  • Internal input resistors on mode pins allow floating mode pins.
  • Default to Interleaved Pipeline mode.
  • Byte Write (BW).

More Datasheets from GSI Technology

Part Number Description
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