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Main Product Characteristics
VDSS
500V
RDS(on) 0.22ohm(typ.)
ID 18A
Features and Benefits
TO- 220F
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product
SSF18N50F
500V N-Channel MOSFET
Marking and Pin Assignment
Schematic Diagram
Description
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
SSF18N50F Datasheet
