1N4449
Features
Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34.
D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in . 0 .6 3 0 M ax. 0 .11 4 0 .0 7 5 0 .0 1 7 M in . 1 6 .0 mm M ax. 2 .9 1 .9 0 .4 2 N o te D in c h e s M in . 1 .0 8 3 M ax. 0 .1 5 4 0 .0 7 5 0 .0 2 0 M in . 2 7 .5 0 mm M ax. 3 .9 1 .9 0 .5 2 N o te
Electrical Characteristics
Type Peak reverse voltage VRM V 1N914 1N4149
1)
Max. aver. rectified current IO m A 75 150 200 150 150 150
2)
Max. power dissip. at 25 Ptot m W 500 500 500 400 400 500 500 500 400 400 400 400
Max. junction temperature Tj 200 200 200 175 175 200 200 200 175 175 175 175
Max. forward voltage drop
Max. reverse current
Max. reverse recovery time
VF V 1.0 1.0 1.0 0.55 0.55 1.0 1.0 1.0 0.54 0.50 0.55 1.0 at IF m A 10 10 200 0.10 0.10 0.10 20 30 0.50 0.10 0.01 10
In n A 25 25 100 50 50 100 25 25 50 50 50 100 at VR V 20 20 50 30 50 25 20...
