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XM2N200 - N-Channel Power MOSFET

Description

design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDSS RDS(ON) ID @ 10V (typ) 190V 356.6mΩ 2A.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.
  • RoHS Compliant.

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Datasheet preview – XM2N200

Datasheet Details

Part number XM2N200
Manufacturer GOFORD
File Size 2.84 MB
Description N-Channel Power MOSFET
Datasheet download datasheet XM2N200 Datasheet
Additional preview pages of the XM2N200 datasheet.

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    Full PDF Text Transcription

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    GOFORD Description The XM2N200 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDSS RDS(ON) ID @ 10V (typ) 190V 356.
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