G900P15M Datasheet Text
G900P15M
P-Channel Enhancement Mode Power MOSFET
Description
The G900P15M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS pliant
-150V -60A < 80mΩ
Schematic diagram
Application l Power switch l DC/DC converters
Ordering Information
Device G900P15M
Package TO-263
Marking...