G7P03L Datasheet Text
GOFORD
G7P03L
P-Channel Enhancement Mode Power MOSFET
Description
The G7P03L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features
- VDS
- ID (at VGS = -10V)
- RDS(ON) (at VGS = -10V)
- RDS(ON) (at VGS = -4.5V)
- 100% Avalanche Tested
- RoHS pliant
-30V -7A < 23mΩ
< 34mΩ
Application
- Power switch
- DC/DC converters
Schematic diagram Marking and pin assignment
Device G7P03L
Package SOT-23-3
Marking...