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G7P03L Datasheet P-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number G7P03L
Manufacturer GOFORD
File Size 834.75 KB
Description P-Channel Enhancement Mode Power MOSFET
Download G7P03L Download (PDF)

General Description

The G7P03L uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

GOFORD G7P03L P-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS.
  • ID (at VGS = -10V).
  • RDS(ON) (at VGS = -10V).
  • RDS(ON) (at VGS = -4.5V).
  • 100% Avalanche Tested.
  • RoHS Compliant -30V -7A < 23mΩ < 34mΩ.

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