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G7K2N20HE Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

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Datasheet Details

Part number G7K2N20HE
Manufacturer GOFORD
File Size 900.04 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G7K2N20HE Datasheet

General Description

The G7K2N20HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G7K2N20HE N-Channel Enhancement Mode Power MOSFET.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 200V 2A < 0.70Ω < 0.72Ω l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>4KV Schematic diagram.

More Datasheets from GOFORD

Part Number Description
G7K2N20 N-Channel Enhancement Mode Power MOSFET