G65P06 Datasheet Text
G65P06D5
P-Channel Enhancement Mode Power MOSFET
Description
The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS pliant
-60V -65A < 20mΩ
Schematic diagram
Application l Power switch l DC/DC converters pin assignment
Ordering Information
Device G65P06D5
Package DFN5- 6-8L
Marking...