G400P06 Datasheet P-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the G400P06 datasheet PDF. This datasheet also includes the G400P06T variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

G400P06 p-channel enhancement mode power mosfet by GOFORD - Datasheet Preview — Note: The manufacturer provides a single datasheet file (G400P06T-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	G400P06
Manufacturer	GOFORD
File Size	897.80 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	G400P06 Datasheet

General Description

The G400P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G400P06T P-Channel Enhancement Mode Power MOSFET.

Key Features

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -60V -32A < 40mΩ Schematic diagram.

More Datasheets from GOFORD

Part Number	Description
G400P06T	P-Channel Enhancement Mode Power MOSFET