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G3K8N15 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the G3K8N15 datasheet PDF. This datasheet also includes the G3K8N15KE variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (G3K8N15KE-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G3K8N15
Manufacturer GOFORD
File Size 689.80 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G3K8N15 Datasheet

General Description

The G3K8N15KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

General

Overview

G3K8N15KE N-Channel Enhancement Mode Power MOSFET.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 150V 6A < 370mΩ < 390mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>2.5KV Schematic diagram.