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G2K2P10S2 Datasheet Dual P-Channel Enhancement Mode Power MOSFET

Manufacturer: GOFORD

Download the G2K2P10S2 datasheet PDF. This datasheet also includes the G2K2P10S2E variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (G2K2P10S2E-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G2K2P10S2
Manufacturer GOFORD
File Size 589.66 KB
Description Dual P-Channel Enhancement Mode Power MOSFET
Download G2K2P10S2 Download (PDF)

General Description

D1 D2 The G2K2P10S2E uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

G1 G2 General

Overview

G2K2P10S2E Dual P-Channel Enhancement Mode Power MOSFET.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>7KV -100V -3.5A < 200mΩ < 220mΩ S1 S2 Schematic diagram.

More Datasheets from GOFORD

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