G2K2P10S2 Datasheet Text
G2K2P10S2E
Dual P-Channel Enhancement Mode Power MOSFET
Description
D1
D2
The G2K2P10S2E uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G1
G2
General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS pliant l ESD (HBM)>7KV
-100V -3.5A < 200mΩ < 220mΩ
S1
S2
Schematic diagram
Application l Power switch l DC/DC converters pin assignment
Ordering Information
Device G2K2P10S2E
Package SOP-8 Dual
Marking...