Datasheet4U Logo Datasheet4U.com

G110N06 Datasheet MOSFET

Manufacturer: GOFORD

Overview: GOFORD General.

General Description

The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.

Key Features

  • VDSS RDS(ON) ID @ 10V(Typ) 55V 5.2 mΩ 110A.
  • Ultra Low On-Resistance.
  • High UIS and UIS 100% Test.