G080N10 Datasheet Text
G080N10T
N-Channel Enhancement Mode Power MOSFET
Description
The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
100V 180A < 7.5mΩ < 8mΩ l 100% Avalanche Tested l RoHS pliant
Schematic diagram
Application l Power switch l DC/DC converters
TO-220
Ordering Information
Device G080N10T
Package TO-220
Marking G080N10
Packaging...