G03N10 Datasheet | GOFORD

GOFORD G03N10 Features - High Density Cell Design for Ultra Low RDS(on) - Special Process Technology for High ESD Capability - Excellent Package for Good Heat Dissipation - Epoxy Meets UL 94 V-0 Flammability Rating - Moisture Sensitivity Level 1 - Halogen Free. “Green” Device (Note 1) - Lead Free Finish/RoHS pliant ("P" Suffix Designates RoHS pliant. See Ordering Information) N-CHANNEL MOSFET Maximum Ratings - Operating Junction Temperature Range : -55°C to +150°C - Storage Temperature Range: -55°C to +150°C - Thermal Resistance: 250°C/W Junction to Ambient(Note 2) Parameter Drain-Source Voltage Gate-Source Volltage Continuous Drain Current Pulsed Drain Current(Note 3) Total Power Dissipation Symbol VDS VGS ID IDM PD Rating 100 ±20 3 20 500 Unit V V A A mW Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony pounds. 2. Surface Mounted on FR4 Board , t≤10s. 3. Repetitive Rating : Pulse Width Limited by Junction Temperature. Internal Structure D G S 1. Gate 2,4. Drain 3. Source Marking: 03A10 SOT-89 A K B 4...