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66N03 - N-Channel Enhancement Mode Power MOSFET

Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 36A < 8.5mΩ < 14mΩ l 100% Avalanche Tested l RoHS Compliant Schematic Diagram.

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Datasheet preview – 66N03

Datasheet Details

Part number 66N03
Manufacturer GOFORD
File Size 843.31 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet 66N03 Datasheet
Additional preview pages of the 66N03 datasheet.

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    66N03 N-Channel Enhancement Mode Power MOSFET Description The 66N03 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 30V 36A < 8.
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