66N03 Datasheet Text
66N03
N-Channel Enhancement Mode Power MOSFET
Description
The 66N03 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V)
30V 36A < 8.5mΩ < 14mΩ l 100% Avalanche Tested l RoHS pliant
Schematic Diagram
Application l Power switch l DC/DC converters
Device 66N03
Package TO-252
Marking 66N03
TO-252
Packaging...