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TGSC2D20120B - SiC Schottky Barrier Diode

Features

  • Low conduction loss due to low VF.
  • Extremely low switching loss by tiny QC.
  • Highly rugged due to better surge current.
  • Industrial standard quality and reliability.
  • RoHS compliant with Halogen-free.
  • Qualified to AEC-Q101 Standards.

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    Features  Low conduction loss due to low VF  Extremely low switching loss by tiny QC  Highly rugged due to better surge current  Industrial standard quality and reliability  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Applications  UPS  Power Inverter  High performance SMPS  Power factor correction Mechanical Data  Case: TO-263  Molding compound: UL flammability classification rating 94V-0  Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SiC Schottky Barrier Diode TGSC2D20120B Key performance parameters Type VDC IF @ 153°C QC@800V TJ TGSC2D20120B 1200V 20A 105nC 175°C TO-263 Ordering Information Part Number TGSC2D20120B Package TO-263 Shipping Quantity 50 pcs / Tube or 800 pcs / Tape & Reel Marking Code GSC2D20120B Maximum Rati
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