• Part: TBL050N10T-5DL8
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: Galaxy Microelectronics
  • Size: 685.19 KB
Download TBL050N10T-5DL8 Datasheet PDF
Galaxy Microelectronics
TBL050N10T-5DL8
Features - Super low gate charge - Green device available - Excellent cd V / dt effect decline - Halogen free - Qualified to AEC-Q101 standards for high reliability Mechanical Data - Case: PDFN5×6-8L - Molding pound: UL Flammability Classification Rating 94V-0 - Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 PDFN5×6-8L Ordering Information Part Number TBL050N10T-5DL8 Package PDFN5×6-8L Shipping Quantity 5000 pcs / Tape & Reel Marking Code 050N10T Maximum Ratings (@ TA = 25℃ unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (TC = 25°C) - 1 Pulsed Drain Current - 2 Symbol VDSS VGSS ID IDM Value 100 ±20 59 236 Unit V V A A Thermal Characteristics Parameter Power Dissipation (TC = 25°C) Thermal Resistance Junction-to-Air - 1 Thermal Resistance Junction-to-Case - 1 Thermal Resistance Junction-to-Lead - 1 Operating Junction Temperature Range Storage Temperature Range Symbol PD RθJA RθJC RθJL TJ...