• Part: SS1150F
  • Description: Schottky Barrier Rectifiers
  • Manufacturer: Galaxy Microelectronics
  • Size: 372.26 KB
Download SS1150F Datasheet PDF
Galaxy Microelectronics
SS1150F
Features - Metal silicon junction, majority carrier conduction - High surge capability - High temperature soldering guaranteed: 260°C/10 seconds - High current capability, low forward voltage drop - Ro HS pliant Mechanical Data - Case: SMAF molded plastic - Molding pound, UL flammability classification rating 94V-0 - Terminals: Solder plated, solderable per MIL- STD-202,Method 208 - Polarity: Color band denotes cathode end Maximum Ratings (@TA = 25°C unless otherwise specified) Characteristic Symbol Peak repetitive reverse voltage VRRM RMS reverse voltage VRMS DC blocking voltage VDC 150 Maximum average forward output current IF(AV) Peak forward surge current, 8.3ms single half-sine-wave IFSM SS1200F 200 140 200 Thermal Characteristics Parameter Symbol SS1200F Typical thermal resistance (Note 1) R ΘJA R ΘJC R ΘJL 78 18...