MBR20200
FEATURES z Metal-Semicondutcor Junction With Guard Ring.
Pb z Epitaxial Construction.
Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use in Low Voltage,High Frequency Inverters Free
Wheeling,and Polarity Protection Applications.
TO-220AC
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
MBR20150
Unit
VRRM
Recurrent Peak Reverse Voltage
150 200 V
VRMS VDC I(AV) IFSM RθJC Tj Tstg
RMS Reverse Voltage
DC Blocking Voltage
Average Forward Total Device Rectified Current @TA=100℃
Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimosed on Rated Load Typical Thermal Resistance Junction to Case (Note 1)
Operating Junction and Storage Tem-perature Range
105 140 150 200
20 150 1.5 -55 to +150
V V A A ℃/W ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Reverse Current
Symbol Test conditions
VR=VRRM,TA=25℃ VR=VRRM,TA=125℃
MBR20150...
