FZT851 Datasheet (NPN Silicon Epitaxial Planar Transistor)

Part: FZT851
Manufacturer: Galaxy Microelectronics
Size: 339.77 KB

FZT851 Key Features

Epitaxial planar die construction
High continuous collector current
Low saturation voltage VCE(SAT)
Case: SOT-223
Molding pound: UL Flammability Classification Rating 94V-0
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208
DC Current Gain
VCE = 1V, IC = 10A
IC = 100mA, IB = 5mA
IC = 6A, IB = 300mA

Other FZT851 Datasheets

Manufacturer	Part Number	Description
Diodes Incorporated	FZT851	60V NPN MEDIUM POWER TRANSISTOR
Kexin Semiconductor	FZT851	NPN Transistors

View all FZT851 datasheets →

FZT851 Description

Features Epitaxial planar die construction High continuous collector current Low saturation voltage VCE(SAT) NPN Silicon Epitaxial Planar Transistor FZT851 Case: UL Flammability Classification Rating 94V-0 Terminals: February 2024 [2.0] .gmesemi.