Datasheet4U Logo Datasheet4U.com

BL8N40F - N-Channel Power Mosfet

Features

  • RDS(ON) =1.2Ω@VGS = 10V. Pb.
  • Ultra Low gate charge (typical 28nC) Lead-free.
  • Low reverse transfer capacitance (CRSS = typical 12.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness BL8N40F ITO-220AB.

📥 Download Datasheet

Datasheet preview – BL8N40F

Datasheet Details

Part number BL8N40F
Manufacturer GME
File Size 274.90 KB
Description N-Channel Power Mosfet
Datasheet download datasheet BL8N40F Datasheet
Additional preview pages of the BL8N40F datasheet.

📁 Similar Datasheet

  • BL8003 - 550V INTEGRATED HALF-BRIDGE DRIVER (BELLING)
  • BL8003L - INTEGRATED HALF-BRIDGE DRIVER (BELLING)
  • BL8021 - 1.2A 1.5MHz 7V Synchronous Buck Converter (SHANGHAI BELLING)
  • BL8022 - 800mA 1.5MHz 7V Synchronous Buck Converter (SHANGHAI BELLING)
  • BL8023B - Smart meter relay driver (BELLING)
  • BL8023C - 300mA Bi-Direction Relay Driver (BELLING)
  • BL8023D - 300mA Bi-Direction Relay Driver (BELLING)
  • BL8023E - Bidirectional relay driver (BELLING)
  • BL8023F - 300mA Bi-Direction Relay Driver (BELLING)
  • BL8023H - 400mA Bi-Direction Relay Driver (BELLING)
Other Datasheets by GME
  • BL8N60 - N-Channel Power Mosfet
  • BL8N60F - N-Channel Power Mosfet
  • BL8N65F - N-Channel Power Mosfet
  • BL8N80F - N-Channel Power Mosfet
  • BL816 - 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
  • BL817 - 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

Full PDF Text Transcription

Click to expand full text
Production specification N-Channel Enhancement Mode Field Effect Transistor FEATURES  RDS(ON) =1.2Ω@VGS = 10V. Pb  Ultra Low gate charge (typical 28nC) Lead-free  Low reverse transfer capacitance (CRSS = typical 12.0 pF)  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness BL8N40F ITO-220AB MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDS Drain-Source voltage VGS Gate -Source voltage 400 ±30 ID Continuous Drain current TC=25℃ 8 EAS Single Pulse Avalanche Energy(Note2) 320 EAR Avalanche Energy,Repetitive(Note1) 2.5 Power Dissipation 39 PD Derate above 25°C 0.312 Units V V A mJ mJ W W/°C RθJC Junction-to-Case 3.18 ℃/W RθJA Junction-to-Ambient 62.
Published: |