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BL4N50D - N-Channel Enhancement Mode MOSFET

Features

  • High switching speed N-Channel Enhancement Mode MOSFET BL4N50D Mechanical Data.
  • Case: TO-252.
  • Molding Compound: UL Flammability Classification Rating 94V-0.
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Ordering Information Part Number BL4N50D Package TO-252 Shipping Quantity 80 pcs / Tube & 2500 pcs / Tape & Reel Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Co.

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Datasheet Details

Part number BL4N50D
Manufacturer Galaxy Microelectronics
File Size 252.05 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet BL4N50D Datasheet
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Full PDF Text Transcription

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Features  High switching speed N-Channel Enhancement Mode MOSFET BL4N50D Mechanical Data  Case: TO-252  Molding Compound: UL Flammability Classification Rating 94V-0  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 TO-252 Ordering Information Part Number BL4N50D Package TO-252 Shipping Quantity 80 pcs / Tube & 2500 pcs / Tape & Reel Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Pulsed Drain Current Symbol VDSS VGSS ID IDM Value 500 ±30 4 16 Thermal Characteristics Parameter Power Dissipation (TC = 25°C) Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Air Operating Junction Temperature Range Storage Temperature Range Symbol PD RθJC RθJ
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