2SD880
FEATURES
- Low frequency power amplifier.
- plememt to 2SB834.
Pb
Lead-free
Production specification
TO-220AB
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
60 V
VCEO VEBO IC PC Tj,Tstg
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature
Continuous
60 V 7V 3A 1.5 W -55 to +150 ℃
X082 Rev.A
.gmesemi.
Production specification
NPN Epitaxial Silicon Transistor
ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-base Breakdown Voltage
V(BR)CBO IC=100μA,IE=0
- -
Collector-emitter Breakdown Voltage V(BR)CEO IC=50m A,IB=0
- -
Emitter-base Breakdown Voltage
V(BR)EBO IE=100μA,IC=0
-...
