• Part: 2SC1623W
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 229.57 KB
Download 2SC1623W Datasheet PDF
Galaxy Microelectronics
2SC1623W
FEATURES - High DC current gain: h FE=200TYP. - High voltage: VCEO=50V. - Power dissipation.(PC=200m W) Pb Lead-free APPLICATIONS - Audio frequency general purpose amplifier. Production specification ORDERING INFORMATION Type No. Marking L4/L5/L6/L7 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous Units V V V m A PC Tj,Tstg Collector Dissipation Junction and Storage Temperature 200 -55 to +150 m W ℃ F035 Rev.A .gmesemi. Production specification NPN Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise...