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2SA1012 - PNP Epitaxial Silicon Transistor

Key Features

  • Low collector saturation voltage VCE(sat) = -0.4V(Max. ) at IC = -3A.
  • Complements the 2SC2562.
  • High speed switching Time: tstg=1.0µs(Typ. ).
  • RoHS compliant with Halogen-free Product specification 2SA1012 Ordering Information Part Number 2SA1012 Package TO-220AB TO-220AB Shipping 50 pcs / Tube Marking Code 2SA1012.

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PNP Epitaxial Silicon Transistor FEATURES  Low collector saturation voltage VCE(sat) = -0.4V(Max.) at IC = -3A  Complements the 2SC2562  High speed switching Time: tstg=1.0µs(Typ.)  RoHS compliant with Halogen-free Product specification 2SA1012 Ordering Information Part Number 2SA1012 Package TO-220AB TO-220AB Shipping 50 pcs / Tube Marking Code 2SA1012 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO IC PC Tj,Tstg Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature -5 V -5 A 2 W -55 to +150 ℃ STM0036A: November 2018 [P] www.gmesemi.