2N7002W
FEATURES z z z z z Low On-Resistance。 Low Gate Threshold Voltage. Low Input Capacitance. Fast Switching Speed. Low Input/Output Leakage.
Pb
Lead-free
APPLICATIONS z z N-channel enhancement mode effect transistor. Switching application. SOT-323
ORDERING INFORMATION
Type No. 2N7002W Marking 7002 Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VDSS VDGR VGSS ID PD RθJA TJ, Tstg Parameter Drain-Source voltage Drain-Gate voltage(RGS≤1MΩ) Gate -Source voltage
- continuous -Non Repetitive (tp<50μs) Maximum Drain current -continuous -Pulsed Value 60 60 ±20 ±40 115 800 200 625 -55 to +150 Units V V V m A m W ℃ /W ℃
Power Dissipation Thermal resistance,Junction-to-Ambient Junction and Storage Temperature
F008 Rev.A
.gmicroelec. 1
Free Datasheet http://..
Production specification
N-Channel Enhancement Mode Field Effect Transistor 2N7002W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Drain-Source Breakdown Voltage Gate Threshold...
