1N6263
FEATURES
For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic level applications
- 35(GLASS)
MECHANICAL DATA Case:JEDEC DO--35,glass case
Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram
Dimensions in millimeters
ABSOLUTE RATINGS(LIMITING VALUES)
Peak reverse voltage Pow er dissipation (Infinite Heat Sink) Maximum single cycle surge 10μs square w ave Junction tenperature Storage temperature range 1)Valid provided that electrodes are kept at ambient temperature.
Symbols
VRRM Ptot IFSM TJ TSTG
Value
60.0 4001) 2.0 125 c-55 ---+ 150
UNITS V m W A
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherw ise specified)
Symbols
Reverse breakdow n voltage @ IR=10 A Leakage current @ VR=50V Forw ard voltage drop @ IF=1m...
