JTDB25 - High power COMMON BASE bipolar transistor

Datasheet Summary

Description

The JTDB 25 is a high power COMMON BASE bipolar transistor.

It is designed for pulsed systems in the frequency band 960-1215 MHz.

The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.

GHz Technology

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Datasheet Details

Part number	JTDB25
Manufacturer	GHz Technology
File Size	142.65 KB
Description	High power COMMON BASE bipolar transistor
Datasheet	JTDB25 Datasheet
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www.DataSheet4U.com JTDB 25 25 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The JTDB 25 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55AW, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Base Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 97 Watts 55 Volts 3.5 Volts 5.

Published: Oct 17, 2007 |