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FIELD EFFECT POWER TRANSISTOR
IRFD2Z0,2Z1 D82AN2-,_M2
0.32 AMPERES 200, 150 VOLTS ROS(ON) = 5.0 .0.
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
IRFD2Z1 Datasheet
